INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
isc Product Specification
2N5684
DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage-
VCE(sat)= -1.
0V(Max)@ IC = -25A
APPLICATIONS ·Designed for use in high power amplifer and switching
circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-50 A
IB Base Current-Continuous
-15 A
PC Collector Power Dissipation @TC=25℃ -300 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARA...