INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
isc Product Specification
2N5932
DESCRIPTION ·DC Current Gain-
: hFE= 20-100@IC= 10A ·Low Collector Saturation Voltage-
: VCE(sat)= 2.
0V(Max)@ IC= 20A
APPLICATIONS ·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
70 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
30 A
IB Base Current-Continuous
7.
5 A
PC Collector Power Dissipation @TC=25℃ 175
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAM...