isc Silicon
PNP Power
Transistor
DESCRIPTION ·High frequency multi emitter
transistor ·Small package(TO-3P) ·High power handling capacity ,160W ·Complement to Type 2SC6145A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Signal
transistors for audio amplifiers ·Audio market
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-260
V
VCEO
Collector-Emitter Voltage
-260
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-4.
0
A
160
W
150
℃
Tstg
Storage Temperature ...