GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II 533 MHz–300 MHz 2.
5 V VEXT 1.
8 V VDD 1.
5 V or 1.
8 V VDDQ Features • Pin- and function-compatible with Micron RLDRAM® II • 533 MHz DDR operation (1.
067Gb/s/pin data rate) • 38.
4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • 8M x 36, 16M x 18, and 32M x 9 organizations available • 8 internal banks for concurrent operation and maximum bandwidth • Reduced cycle time (15 ns at 533 MHz) • Address Multiplexing (Nonmultiplexed address option available) • SRAM-type interface • Programmable Read Latency (RL), row cycle time, and burst sequence length • Balanced ...

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