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GS8321E18E-V

Part Number GS8321E18E-V
Manufacturer GSI Technology
Description 36Mb Sync Burst SRAMs
Published Oct 14, 2016
Detailed Description GS8321E18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs ...
Datasheet GS8321E18E-V





Overview
GS8321E18/32/36E-xxxV 165-Bump FP-BGA Commercial Temp Industrial Temp 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 250 MHz–133 MHz 1.
8 V or 2.
5 V VDD 1.
8 V or 2.
5 V I/O Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • IEEE 1149.
1 JTAG-compatible Boundary Scan • 1.
8 V or 2.
5 V core power supply • 1.
8 V or 2.
5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard ...






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