TSM60NB260 Taiwan Semiconductor N-Channel Power MOSFET 600V, 13A, 0.
26Ω FEATURES ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS tested ● High commutation performance ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 0.
26 30 V Ω nC APPLICATION ● Power Supply ● AC/DC LED Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Cur...

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