isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-speed switching, and is ideal for use
as a driver in devices such as switching
regulators,DC/DC converters, and high frequency power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-12
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-10
A
IB
Base Current-Continuous
Collector Power Dissipatio...