isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.
5V(Max)( IC= -1A; IB= -0.
05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-gain audio amplifier and power
Switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM IB
PC
TJ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃
Junction Temperature
-50
V
-50
V
-5
V
-2
A
-3
A
-0.
4
A
15...