CJ2101 SOT-323 Plastic-Encapsulate MOSFETS CJ2101 P-Channel MOSFET FEATURE Leading Trench Technology for Low RDS(on) Extending Battery Life SOT-323 1.
GATE 2.
SOURCE 3.
DRAIN APPLICATIONS z High Side Load Switch z Charging Circuit z Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc MARKING: TS1 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (tp=10µs) Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD RθJA TJ Tstg Value - 20 ±8.
0 -1.
4 -3.
0 0.
29 431 150 -50 ~+150 Unit V A W ℃/W ℃ s...

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