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Part Number
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DMN2011UFDF |
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Manufacturer
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Diodes |
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Description
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20V N-CHANNEL MOSFET |
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Published
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Oct 21, 2016 |
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Detailed Description
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ADVANCE INFORMATION
Product Summary
BVDSS 20V
RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V
ID MAX TA = +25°C
11....
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Datasheet
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DMN2011UFDF
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Overview
ADVANCE INFORMATION
Product Summary
BVDSS 20V
RDS(ON) MAX 9.
5mΩ @ VGS = 4.
5V 11mΩ @ VGS = 2.
5V
ID MAX TA = +25°C
11.
7A
10.
8A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DMN2011UFDF
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.
6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
“Green” Device (Note 3) For automotive applications requiring ...
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