® BUL1101E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
s HIGH VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s LARGE RBSOA
PRELIMINARY DATA
APPLICATIONS s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
3 2 1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg Tj
Parameter Colle...