1165892
High power
NPN silicon power
transistors.
These devices are designed for linear amplifiers, series pass
regulators, and inductive
switching applications.
Features:
• Forward biased second breakdown current capability IS/b = 2.
5 A dc at VCE = 60V dc.
• Pb-free packages.
(TO-3)
Style 1: Pin 1.
Base
2.
Emitter Collector (Case)
Dimensions Minimum
Maximum
A 1.
550 (39.
37) Reference
B - 1.
050 (26.
67)
C 0.
250 (6.
35) 0.
335 (8.
51)
D 0.
038 (0.
97) 0.
043 (1.
09)
E 0.
055 (1.
40) 0.
070 (1.
77)
G 0.
430 (10.
92) BSC
H 0.
215 (5.
46) BSC
K 0.
440 (11.
18) 0.
480 (12.
19)
L 0.
665 (16.
89) BSC
N - 0.
830 (21.
08)
Q 0.
151 (3.
84) 0.
165 (4.
19)
U 1.
187 (30.
15) BSC
V 0.
131 (3.
33) 0.
188 (4.
77) Dimensions ...