isc Silicon
PNP Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.
0V(Max)@ IC= -3A = -4.
0V(Max)@ IC= -5A
·Complement to Type TIP122 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
TIP127
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-5
ICM
Collector...