isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 2.
0V(Max)@ IC= 3A = 4.
0V(Max)@ IC= 5A
·Complement to Type TIP127 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
TIP122
APPLICATIONS ·Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
C...