isc Silicon
NPN Power
Transistor
BD243/A/B/C
DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.
3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C
·Complement to Type BD244/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD243
55
BD243A
70
VCBO
Collector-Base Voltage
V
BD243B
90
BD243C 110
BD243
45
VCEO
Collector-Emitter Voltage
BD243A
60
V
BD243B
80
BD243C 100
VEBO
Emitter-Base Voltage
5
V
IC
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