TIP147T —
PNP Epitaxial Silicon Darlington
Transistor
November 2014
TIP147T
PNP Epitaxial Silicon Darlington
Transistor
Features
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• High DC Current Gain: hFE = 1000 at VCE = -4 V, IC = -5 A (Minimum) • Industrial Use
• Complement to TIP142T
Equivalent Circuit
C
B
1 TO-220 1.
Base 2.
Collector 3.
Emitter
R1
≅Ω ≅Ω
R2 E
Ordering Information
Part Number TIP147T
TIP147TTU
Top Mark TIP147T TIP147T
Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge)
Packing Method Bulk Rail
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device.
The device may not function or be operable ...