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Part Number
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MTB04N03E3 |
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Manufacturer
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CYStech Electronics |
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Description
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N-Channel Enhancement Mode Power MOSFET |
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Published
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Oct 26, 2016 |
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Detailed Description
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CYStech Electronics Corp.
Spec. No. : C889E3 Issued Date : 2013.02.20 Revised Date : 2013.02.26 Page No. : 1/7
N-Chann...
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Datasheet
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MTB04N03E3
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Overview
CYStech Electronics Corp.
Spec.
No.
: C889E3 Issued Date : 2013.
02.
20 Revised Date : 2013.
02.
26 Page No.
: 1/7
N-Channel Enhancement Mode Power MOSFET
MTB04N03E3
BVDSS ID
Features
• Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package
RDSON(TYP)
VGS=10V, ID=30A VGS=4.
5V, ID=24A
30V 115A 3.
8mΩ 6.
1mΩ
Symbol
MTB04N03E3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
L=2m...
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