MSN05B2K

MSN05B2K 55V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =55V,ID =120A RDS(ON) 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology fo...