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Part Number
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MSN0612W |
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Manufacturer
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MORESEMI |
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Description
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N-Channel MOSFET |
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Published
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Oct 29, 2016 |
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Detailed Description
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MSN0612W
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID =12A RDS(ON) 11mΩ @ VGS=1...
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Datasheet
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MSN0612W
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Overview
MSN0612W
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID =12A RDS(ON) 11mΩ @ VGS=10V (Typ:8.
6mΩ) RDS(ON) 14mΩ @ VGS=4.
5V (Typ:10.
3mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Lead Free
Application
● Power switching application ● Load switch
PIN Configuration
Schematic diagram
SOP-8 top view
Marking and pin assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN0612W
MSN0612W
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
P...
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