MSN0620D

MSN0620D 60V(D-S) N-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS =60V,ID =20A RDS(ON) 45mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capabi...