MSN15B0K

MSN15B0K 150V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =150V,ID =100A RDS(ON) 12mΩ @ VGS=10V (Typ:9.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● Good stability and uniformity with high EAS ● Excellent package for ...