2SK2247 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source.
• Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK G 21 3 4 D 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SK2247 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation VDSS VGSS ID I *1 D(pulse) I DR Pch*2 30 ±20 2 4 2 1 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes 1.
PW ≤ 100 µs,...

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