Part Number
|
C3M0065100K |
Manufacturer
|
Cree |
Description
|
Silicon Carbide Power MOSFET |
Published
|
Nov 3, 2016 |
Detailed Description
|
VDS
1000 V
C3M0065100K
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Chan...
|
Datasheet
|
C3M0065100K
|
Overview
VDS
1000 V
C3M0065100K
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3MTM SiC MOSFET technology
• Optimized package with separate driver source pin
• 8mm of creepage distance between drain and source
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • Renewable e...
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