Part Number
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C3M0280090J |
Manufacturer
|
Cree |
Description
|
Silicon Carbide Power MOSFET |
Published
|
Nov 3, 2016 |
Detailed Description
|
C3M0280090J
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features • New C3...
|
Datasheet
|
C3M0280090J
|
Overview
C3M0280090J
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
N-Channel Enhancement Mode
Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source
Package
TAB Drain
Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • Lighting • High voltage DC/DC converters • Telecom Power Supplies • Induction Heating
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