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C3M0280090J

Part Number C3M0280090J
Manufacturer Cree
Description Silicon Carbide Power MOSFET
Published Nov 3, 2016
Detailed Description C3M0280090J Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features • New C3...
Datasheet C3M0280090J





Overview
C3M0280090J Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source Package TAB Drain Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • Lighting • High voltage DC/DC converters • Telecom Power Supplies • Induction Heating 1 2 34 5...






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