CGHV60075D5
75 W, 6.
0 GHz, GaN HEMT Die
Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT).
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs
transistors.
FEATURES
• 19 dB Typical Small Signal Gain at 4 GHz • 17 dB Typical Small Signal Gain at 6 GHz • 65% Typical Power Added Efficiency at 4 GHz • 60% Typical Power Added Efficiency at 6 GHz • 75 W Typical PSAT • 50 V Operation • High Breakdown Voltage • Up to 6 GHz Operation
APPLICATIONS
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