Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks – Eight Main Memory Blocks (One 32K Bytes, Seven 64K Bytes) • Fast Erase Cycle Time – 6 Seconds • Byte-by-Byte Programming – 20 µs/Byte Typical • Hardware Data Protection • DATA Polling for End of Program Detection • Low Power Dissipation – 20 mA Active Current – 70 µA CMOS Standby Current • Typical 10,000 Write Cycles • Green (Pb/Halide-free) Packaging Option 4-megabit (512K x 8) 5-volt Only Flash Memory AT49F040A 1.
Description The AT49F040A is a 5-vol...

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