isc Silicon
PNP Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 70(Min) @ IC= -0.
5A ·Low Collector Saturation Voltage-
: VCE(sat) = -0.
3V(Max.
)@ IC= -0.
5 A ·Complement to the
NPN MJD200 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low voltage, low -power ,high-gain audio
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector...