isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE = 40(Min) @ IC= 0.
2 A ·Low Collector Saturation Voltage-
: VCE(sat) = 0.
3V(Max.
)@ IC= 0.
5 A ·Complement to the
PNP MJD253 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low power audio amplifier and low-current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Colle...