isc Silicon
PNP Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.
1 V(Max)@ IC = -4A ·Complement to Type MJD3055 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current
-6
A
Collector Power Dissipation @TC=25℃
20
PC
W
Collector Power Dissipati...