isc Silicon
NPN Power
Transistors
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 120V(Min) ·Complement to Type TIP32D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
160
V
VCEO Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
5
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
1
A
40
W
15...