isc Silicon
PNP Power
Transistor
DESCRIPTION ·Continuous Collector Current-IC= -5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.
) ·Collector Power Dissipation-
: PC= 30W @TC≤ 100℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and high speed switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-7.
5
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@Ta= 25℃ Colle...