Part Number
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CY7C12661KV18 |
Manufacturer
|
Cypress Semiconductor |
Description
|
1.8 V synchronous pipelined SRAM |
Published
|
Nov 6, 2016 |
Detailed Description
|
CY7C12661KV18, CY7C12771KV18 CY7C12681KV18, CY7C12701KV18
36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read...
|
Datasheet
|
CY7C12661KV18
|
Overview
CY7C12661KV18, CY7C12771KV18 CY7C12681KV18, CY7C12701KV18
36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.
5 Cycle Read Latency)
36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.
5 Cycle Read Latency)
Features
■ 36-Mbit density (4 M × 8, 4 M × 9, 2 M × 18, 1 M × 36) ■ 550 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces
(data transferred at 1100 MHz) at 550 MHz ■ Available in 2.
5 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high speed
systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ Synchronous in...
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