Part Number
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CY7C1319BV18 |
Manufacturer
|
Cypress Semiconductor |
Description
|
1.8V Synchronous Pipelined SRAM |
Published
|
Nov 6, 2016 |
Detailed Description
|
CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18
18-Mbit DDR-II SRAM 4-Word Burst Architecture
Features
Functional...
|
Datasheet
|
CY7C1319BV18
|
Overview
CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18
18-Mbit DDR-II SRAM 4-Word Burst Architecture
Features
Functional Description
• 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) • 300-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces
(data transferred at 600MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize
clock-skew and flight-time mismatches • Echo clocks (CQ and CQ) simplify data capture in
high-speed systems • Synchronous internally self-timed writes • 1.
8V core power supply with HSTL inputs and outputs • Varia...
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