IS61(4)LF12836EC/IS61(4)VF12836EC/IS61(4)LF12832EC IS61(4)VF12832EC/IS61(4)LF25618EC/IS61(4)VF25618EC 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM FEATURES DESCRIPTION APRIL 2017  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs and data outputs  Auto Power-down during deselect The 4Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networki...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)