Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns • Internal Program Control and Timer • 8K bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds •• Byte By Byte Programming - 10 µs/Byte Hardware Data Protection • DATA Polling For End Of Program Detection •• Low Power Dissipation - 30 mA Active Current - 100 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash Memories.
Their 1-megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 45 ns (HF vers...

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