Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10150CT
FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Vo...