Semiconductor
THN405Z
SiGe
NPN Transistor
□ Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
SOT-343
Unit in mm
□ Features
- High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA
- High power gain |S21|2 = 15 dB at VCE = 2 V, IC = 5 mA, f = 1.
8 GHz MAG = 20 dB at VCE = 2 V, IC = 5 mA, f = 1.
8 GHz
- Low noise figure NF = 1.
4 dB at VCE = 2 V, IC = 2 mA, f = 1.
8 GHz
□ Absolute Maximum Ratings ( TA = 25 ℃ )
Param eter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temper...