SMD Type
Silicon
PNP Transistor 2SB768
Transistors
Features
High Voltage:VCBO=-150V
+1.
50 0.
15 -0.
15
TO-252
6.
50+0.
15 -0.
15
5.
30+0.
2 -0.
2
2.
30+0.
1 -0.
1
0.
50+0.
8 -0.
7
Unit: mm
3.
80
+5.
55 0.
15 -0.
15
+9.
70 0.
2 -0.
2
+ 0.
252 .
6 5 -0.
1
+ 0.
150 .
5 0 -0.
15
+ 0.
281 .
5 0 -0.
1
0.
80+0.
1 -0.
1
0.
127 max
2.
3 4.
60+0.
15
-0.
15
0.
60+0.
1 -0.
1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-to-Base Voltage
VCBO
Collector-to-Emitter Voltage
VCEO
Emitter-to-Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse) *1
ICP
Total Power Dissipation *2 Ta=25
PT
Junction Temperature
Tj
Storage Temperature
Tstg
*1 PW 10ms,.
Duty Cycle 50%
*2 when mounted on ceramic ...