isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1816
DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Relay drivers,High speed inverters,converters and other
general high-current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous 4 A
ICP Collector Current-Pulse
Collect...