isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1918
DESCRIPTION ·High fT：fT=80MHz(TYP) ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Excellent linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.
5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction ...