Power
Transistor (100V, 2A)
2SD1980
Features 1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1316.
inner circuit
C
B
R1 R2
E
R1 3.
5kΩ R2 300Ω
B : Base C : Collector E : Emitter
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
100
Collector-emitter voltage
VCEO
100
Emitter-base voltage
VEBO
6
Collector current Collector power dissipation
IC PC
2 3 ∗1 1
10
Junction temperature
Tj 150
Storage temperature
∗1 Single pulse Pw=100ms
Tstg
−55 to +150
Unit V V V
A(DC) A(Pulse)
W
W(Tc=25°C) °C °C
Packaging specifications and hFE
Type
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