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MJE521

Part Number MJE521
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 11, 2016
Detailed Description isc Silicon NPN Power Transistor MJE521 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 40 V(Min) ·DC...
Datasheet MJE521





Overview
isc Silicon NPN Power Transistor MJE521 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 40 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 1A ·Complement to Type MJE371 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general−purpose amplifier and switching circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Juncti...






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