Part Number
|
SST12CP11C |
Manufacturer
|
Microchip |
Description
|
High-Efficiency Power Amplifier |
Published
|
Nov 11, 2016 |
Detailed Description
|
SST12CP11C
2.4 GHz High-Linearity, High-Efficiency Power Amplifier
Features
• High Gain: - Typically 37 dB gain across ...
|
Datasheet
|
SST12CP11C
|
Overview
SST12CP11C
2.
4 GHz High-Linearity, High-Efficiency Power Amplifier
Features
• High Gain: - Typically 37 dB gain across 2.
4–2.
5 GHz over temperature -20°C to +85°C
• High linear output power: - 30 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 - Meets 802.
11g OFDM spectrum mask requirement up to 28 dBm - Typically 25 dBm with 3% EVM, 802.
11g, 54 Mbps - Typically 24 dBm with 2.
5% EVM, 802.
11n, MCS7-HT20, 50% duty cycle - Typically 24 dBm with 1.
75% EVM, MCS9HT40, 50% duty cycle - Meets 802.
11b ACPR requirement up to 28 dBm
• High-speed power-up/down - Turn on/off time (10%-90%) 100 ns
• 10:1 VSWR survivability (unconditionally stable up to 28 dBm)
• On-chip power ...
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