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SST12CP11C

Part Number SST12CP11C
Manufacturer Microchip
Description High-Efficiency Power Amplifier
Published Nov 11, 2016
Detailed Description SST12CP11C 2.4 GHz High-Linearity, High-Efficiency Power Amplifier Features • High Gain: - Typically 37 dB gain across ...
Datasheet SST12CP11C




Overview
SST12CP11C 2.
4 GHz High-Linearity, High-Efficiency Power Amplifier Features • High Gain: - Typically 37 dB gain across 2.
4–2.
5 GHz over temperature -20°C to +85°C • High linear output power: - 30 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 5 - Meets 802.
11g OFDM spectrum mask requirement up to 28 dBm - Typically 25 dBm with 3% EVM, 802.
11g, 54 Mbps - Typically 24 dBm with 2.
5% EVM, 802.
11n, MCS7-HT20, 50% duty cycle - Typically 24 dBm with 1.
75% EVM, MCS9HT40, 50% duty cycle - Meets 802.
11b ACPR requirement up to 28 dBm • High-speed power-up/down - Turn on/off time (10%-90%) 100 ns • 10:1 VSWR survivability (unconditionally stable up to 28 dBm) • On-chip power ...






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