isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector-Emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
PC Rth j-a
Total Power Dissipation @ Ta=25℃
Thermal Resistance,Junction to Ambient
1.
25 100
TJ
Junction Temperature
150
A W ℃/W ℃
Tstg
Storage Temperature Range
-55~150 ℃
KTA1042D
isc website:www.
iscsemi.
com
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