isc Silicon
PNP Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= -160V(Min) ·Complement to Type KTC2800 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC(DC)
Collector Current(DC)
-1.
5
A
IB(DC) PC TJ
Base Current
Collector Power Dissipation @Ta=25℃ Collector Power Dissipation @TC=25℃
Junction Temperature
-1.
0
A
1.
5 W
10
150
℃
Tstg
Storage Temperature
-55~150 ℃
KTA1700
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