INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
KTC2201
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation
APPLICATIONS ·Switching
regulator applicaition.
·High voltage switching application.
·High speed DC-DC converter application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
500 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
8A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
3A 40 W 150 ℃
Tstg Storage Temperature Range
-65~...