INCHANGE Semiconductor
isc Silicon
PNP Darlington Power
Transistor
isc Product Specification
BD678AG
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = -60V ·DC Current Gain—
: hFE = 750(Min) @ IC= -2 A ·Complement to Type BD677A ·G=Pb-Free Package
APPLICATIONS ·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-4 A
IB Base Current
PC
Collector Power Dissipation TC=25℃
Ti Junction Temperature
Tstg Storage Temperature Range
...