isc Silicon
PNP Power
Transistor
BDS19
DESCRIPTION ·High Voltage: VCEV= -150V(Min) ·Low Saturation Voltage-
: VCE(sat)= -1.
5V(Max)@ IC= -4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power linear and switching application and
General puepose power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-150
VCEO
Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
IB
Base Current
-2
PC
Collector Power Dissipation @ TC=25℃
50
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
UNIT V V V A A W ...