isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high frequency electronic lighting ballast
applications, converters, inverters, switching
regulators, motor control systems, etc.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1000
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperatu...