isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical.
They are particulary suited for line-operated swtchmode applications
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage (VBE= -1.
5V)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation @...